Momag 2018 - Inatel

18º SBMO – SIMPÓSIO BRASILEIRO DE MICRO-ONDAS E OPTOELETRÔNICA
13º CBMAG – CONGRESSO BRASILEIRO DE ELETROMAGNETISMO

Você está acessando nosso website pela primeira vez. Nosso site, objetivando permitir, particularmente, uma melhor interação com você, bem como para permitir funcionalidades para melhorar o funcionamento técnico das páginas, mensurar a audiência do website e oferecer produtos e serviços relevantes por meio de anúncios personalizados, coleta informações do seu dispositivo e da sua navegação por meio de cookies. Para saber mais sobre a coleta de dados/informações e cookies que coletamos, acesse a nossa Política de Privacidade.

Aceitar Não aceitar

Para ver o formulário de contatos você aceita nossa Política de Privacidade.

Aceitar Não aceitar

Keynotes

META-ATOMS AND METAMATERIALS FOR PERFORMANCE ENHANCEMENT OF ANTENNAS

Abstract: There has been an enormous research effort into artificially synthesized materials, aka ‘metamaterials’ that have novel and unusual material properties, and find suitable uses in many microwave and antenna applications, including performance enhancement of legacy antennas. In an attempt to produce a formalism that classifies these properties we introduce the concept of meta-atoms (MTAs), that are ‘meso’ scale particles, and have typical sizes much less than the wavelength at which the antenna will be operating. They could therefore be assembled to form synthetic materials of some predefined properties required for a particular application. A project entitled “Synthesizing 3D Metamaterials (MTMs) for RF, Microwave and THz Applications,” has been established in UK to study and classify these meta-atoms and produce structures that can be manufactured with Additive Manufacturing (AM) techniques, such as 3 D printing. This talk will focus on the topic of artificial synthesis of materials and present some real-world examples of their practical implementation. Unlike many of the previous works on MTMs, the focus of our work is on developing materials utilizing materials which operate away from the resonance range of the particles. Hence, they are not narrowband, dispersive, or lossy, as some of the early versions of the MTMs, e.g., Double-negative (DNG) or Zero-index (ZI) types, were reputed to be; and, consequently, they find wider range of applications in modern antenna design problems, as we will demonstrate via a number of illustrative examples.

Short Bio

 

Prof. Dr. Raj Mittra

Ultrafast electron dynamics in strong THz fields

Abstract: Electron dynamics in semiconductor materials determine the properties of virtually all electronic devices. With shrinking dimensions and increasing operational frequency of contemporary and future transistors, knowledge of the behavior of electrons in strong, THz-frequency electric fields is becoming increasingly important. Shrinking gate lengths and operational voltages in present-day and future transistors dictate operational electric fields inside components of several hundred kV/cm, and this internal field strength with reach the MV/cm regime within the next 5-7 years. At such field strengths, highly nonlinear processes such as Zener tunneling, impact ionization and Auger scattering become relevant limiting factors for performance (see Fig. 1a). Additionally, long-term effects such as electromigration has decremental effects on device performance and lifetime, as illustrated in Fig. 1b. In this presentation I will discuss recent ultrafast experiments that address such strong-field physical effects in semiconductors and metals. We use intense sub-picosecond THz pulses to reach well into the relevant MV/cm regime, where we investigate tunneling of controllable, femtosecond-duration electron bunches from metallic structures into the surrounding medium (Fig. 1a), as well as nonlinear carrier generation and multiplication effects in bulk semiconductors. The short duration of the THz pulses allows us to apply field strengths well above the quasi-static breakdown fields, and thus to reach unexplored land.

Short Bio

 

Dr. Peter Uhd Jepsen

THZ

Disruptive Innovation through Engineering Simulation

Abstract: imagine if you could experience a newly designed product before building it. That is precisely what over 40,000 ANSYS customers do using advanced physics-based simulation. Engineered products from smart phones to industrial automation to autonomous vehicles are being experienced on the computer.

In this presentation, Dr. Williams will show how great products are designed by engineers using advanced physics-based simulation, and how that technology has allowed individuals and companies to create disruptive products. The next great innovations come not only from highly-financed corporations but also from two energetic engineers in a garage. Industry examples will be highlighted.

Short Bio

 

Dr. Larry Williams

ANSYS

Simulation Methods for 5G to address Large and Complicated Scenarios in Wireless Communications

Abstract: The future is wireless on many fronts: mobile communication, video streaming, internet access, autonomous cars, as well as device-to-device communication in the Internet of Things. Simulation in the design- and network-planning stages is crucial for successful deployment. Problem is that the geometries involved (office buildings, city blocks, terrain) are extrelemy large in terms of wavelengths and at the same time have high complexity. If one doesn’t take enough detail into account, or if one uses methods that ignore important effects, then uncertainties of many tens of dB occur easily. This presentation will give an overview of simulation methods one can employ, in particular for 5G applications, and will give insight in the pros, cons, trade-offs and accuracies one can expect.

Short Bio

 

Dr. Martin Vogel

Dr. Maximiliano Salvadori Martinhão

Abstract: Engenheiro de Telecomunicações pelo INATEL, Bacharel em Direito pelo Instituto de Educação Superior de Brasília – IESB e Mestre em Gerência de Telecomunicações pela Universidade de Strathclyde (Reino Unido). É o atual Secretário de Desenvolvimento Tecnológico e Inovação do Ministério da Ciência, Tecnologia, Inovações e Comunicações/MCTIC, no qual executa as seguintes atividades: Coordena e acompanha a política nacional de desenvolvimento tecnológico e de inovação; articula e coordena a criação de programas nacionais de desenvolvimento e de inovação; supervisiona a política de incentivos fiscais para o desenvolvimento tecnológico e inovação, relacionados à Lei nº 11.196, de 21 de novembro de 2005; supervisiona o desenvolvimento e a consolidação de ambientes inovadores...

Short Bio

 

Dr. Maximiliano

Salvadori Martinhão

Epítome da Evolução nas Telecomunicações

Abstract: O texto é uma sinopse da evolução das telecomunicações a partir do final do século XVIII. Por essa época, começaram as apresentações dos primeiros métodos para envio de mensagens a longas distâncias envolvendo certos tipos de tecnologia. Procurou-se mostrar como o tempo de transmissão foi progressivamente reduzido, superando antigos procedimentos que utilizavam mensageiros, correio a cavalo, pombo-correio, ou certos sistemas sonoros ou visuais. Salientaram-se os avanços de métodos, de processos e suas conseqüências no contínuo bem-estar dos usuários. Destaca-se o papel relevante na aproximação dos povos e das comunidades, bem como sua grande atuação no progresso das nações. São apresentadas as contribuições de inventores, pesquisadores e empreendedores. Descreve-se o advento de recursos tecnológicos e científicos que foram fundamentais na modernização e no aumento da eficácia dos equipamentos. Mostra-se, também, como foram transferidos os inventos e seus respectivos aperfeiçoamentos para o parque industrial brasileiro.

Short Bio

 

Jose Antonio

Justino Ribeiro

Realização:

SBMO

Inatel

UNIFEI

SBMAG


Diamante:

Keysight

Ouro:

Anritsu


Prata:

Altair

Nowigo

Rohde Schawarz

Sidia

Tektronix

Bronze:

ESSS

Vivavox


Apoio:

Padtec

CNPQ

CAPES

MOMAG 2018

Instituto Nacional de Telecomunicações

Campus em Santa Rita do Sapucaí - MG - Brasil

Av. João de Camargo, 510 - Santa Rita do Sapucaí - MG

35 3471 9200 | momag@inatel.br